Infineon Parts

60 mm Thyristor/Thyristor Module with 1600 V in pressure contact technology

60 mm Thyristor/Diode Module with 1600 V in pressure contact technology

60 mm Thyristor/Thyristor Module with 2200 V in pressure contact technology

EasyPIM™ 1200 V, 15 A TRENCHSTOP/FIELDSTOP IGBT4, emitter-controlled 4 diode and TIM 2.0

1200 V, 420 A in 3-level topology IGBT module

1200 V, 420 A in 3-level topology IGBT module

HybridPACK™ Drive G2 CoolSiC™: Compact 1300V/390A B6-bridge power module optimized for inverter various power classes

1200 V, 35 A single switch IGBT module

1200 V, 560 A in 3-level boost topology IGBT module

1200 V, 150 A common emitter IGBT module

1700 V, 1400 A half-bridge IGBT module

1700 V, 2000 A half-bridge IGBT module

HybridPACK™ Drive G2 with Si/SiC Fusion switch : Compact 750V B6-bridge power module optimized for inverter various power classes

HybridPACK™ Drive G2 CoolSiC™: Compact 1200 V/500 A B6-bridge power module optimized for inverter various power classes

HybridPACK™ Drive G2 CoolSiC™: Compact 1200 V/300 A B6-bridge power module optimized for inverter various power classes

HybridPACK™ Drive G2 CoolSiC™: Compact 750 V/600 A B6-bridge power module optimized for inverter various power classes

This HybridPACK™ Drive G2 module is a very compact six-pack power module (1200V/520A) with enhanced package optimized for hybrid and electric vehicles

4500 V, 1200 A single switch IGBT module

50 mm Single Thyristor Module with 1800 V in pressure contact technology

50 mm Single Thyristor Module with 2200 V in pressure contact technology

50 mm Single Rectifier Diode Module with 2200 V in pressure contact technology

1200 V, 450 A half-bridge IGBT module

1200 V, 450 A half-bridge IGBT module with pre-applied thermal interface material

1200 V, 500 A 3-level NPC1 topology IGBT module